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BUZ73 Scheda tecnica(PDF) 7 Page - Infineon Technologies AG

Il numero della parte BUZ73
Spiegazioni elettronici  SIPMOS Power Transistor
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ73 Scheda tecnica(HTML) 7 Page - Infineon Technologies AG

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BUZ 73
Data Sheet
7
05.99
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter:
V
GS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
˚C
160
T
j
2%
typ
98%
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter:
ID = 4.5 A, VGS = 10 V
-60
-20
20
60
100
˚C
160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.9
R
DS (on)
typ
98%
Typ. capacitances
C
= f (VDS)
parameter:VGS = 0V, f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter:
Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)


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