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STFI26N60M2 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STFI26N60M2 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 15 page July 2015 DocID027600 Rev 2 1/15 This is information on a product in full production. www.st.com STF26N60M2, STFI26N60M2 N- channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID PTOT STF26N60M2 650 V 0.165 Ω 20 A 30 W STFI26N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF26N60M2 26N60M2 TO-220FP Tube STFI26N60M2 I²PAKFP TO-220FP I2PAKFP (TO-281) 1 2 3 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) |
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