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STD7LN80K5 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STD7LN80K5 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 16 page December 2015 DocID028774 Rev 1 1/16 This is information on a product in full production. www.st.com STD7LN80K5 N- channel 800 V, 0.95 Ω typ., 5 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD7LN80K5 800 V 1.15 Ω 5 A Industry’s lowest R DS(on) x area Industry’s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed us ing MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel DPAK AM15572v1_tab D(2, TAB) G(1) S(3) |
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