BFY420H datasheet(3/5 Pages) INFINEON

Il numero della parte	BFY420H

Spiegazioni elettronici	HiRel NPN Silicon RF Transistor

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BFY420

Semiconductor Group

3 of 5

Draft B, September 99

Electrical Characteristics (continued)

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 30mA, VCE = 3 V, f = 2.0 GHz

fT

20

22

-

GHz

Collector-base capacitance

VCB = 2 V, VBE = vbe = 0, f = 1 MHz

CCB

-

0.14

0.9

pF

Collector-emitter capacitance

VCE = 2 V, VBE = vbe = 0, f = 1 MHz

CCE

-

0.46

0.85

pF

Emitter-base capacitance

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

CEB

-

0.67

3.0

pF

Noise Figure

IC = 5 mA, VCE = 2 V, f = 1.8 GHz,

ZS = Zsopt

F

-

1.1

1.7

dB

Insertion power gain

IC = 20 mA, VCE = 2 V, f = 1.8 GHz

ZS = ZL = 50

Ω

|S21e|

2

14

18

-

dB

Power gain

IC = 20 mA, VCE = 2 V, f = 1.8 GHz

ZS = ZSopt , ZL = ZLopt

Gms

1.)

-21

-

dB

1dB Compression point

IC = 20 mA, VCE = 2 V, f = 1.8 GHz

ZS = ZSopt , ZL = ZLopt

P-1dB

-12

-

dBm

Notes.:

1)

G

S

ms =

21

12

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