SI53119 datasheet(5/35 Pages) SILABS

Il numero della parte	SI53119

Spiegazioni elettronici	19-OUTPUT PCIE GEN 3 BUFFER

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Si53119

Rev. 1.1

5

Table 2. SMBus Characteristics

Parameter

Symbol

Test Condition

Min

Max

Unit

SMBus Input Low Voltage1

VILSMB

0.8

V

SMBus Input High Voltage1

VIHSMB

2.1

VDDSMB

V

SMBus Output Low Voltage1

VOLSMB

@ IPULLUP

0.4

V

Nominal Bus Voltage1

VDDSMB

@ VOL

2.7

5.5

V

SMBus sink Current1

IPULLUP

3V to 5V +/-10%

4

mA

SCLK/SDAT Rise Time1

tRSMB

(Max VIL – 0.15) to (Min VIH + 0.15)

1000

ns

SCLK/SDAT Fall Time1

tFSMB

(Min VIH + 0.15) to (Max VIL – 0.15)

300

ns

SMBus Operating Frequency1,2

fMINSMB

Minimum Operating Frequency

100

kHz

Notes:

1.

Guaranteed by design and characterization

2.

The differential input clock must be running for the SMBus to be active

Table 3. Current Consumption

TA = 0–70 °C; supply voltage VDD =3.3 V ±5%

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Operating Current

IDDVDD

100 MHz, VDD Rail

—

25

35

mA

IDDVDDA

100 MHz, VDDA + VDDR, PLL Mode

—

16

20

mA

IDDVDDIO

100 MHz, CL = Full Load, VDD IO Rail

—

130

150

mA

Power Down Current

IDDVDDPD

Power Down, VDD Rail

—

1.5

2

mA

IDDVDDAPD

Power Down, VDDA Rail

—

8

12

mA

IDDVDDIOPD

Power Down, VDD_IO Rail

—

0.17

0.5

mA

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