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SI8605 Scheda tecnica(PDF) 11 Page - Silicon Laboratories

Il numero della parte SI8605
Spiegazioni elettronici  BIDIRECTIONAL IC ISOLATORS WITH UNIDIRECTIONAL DIGITAL CHANNELS
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Produttore elettronici  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
Logo SILABS - Silicon Laboratories

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Si860x
Rev. 1.4
11
Table 7. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
NB
SOIC-8
NB
SOIC-16
WB
SOIC-16
Nominal Air Gap (Clearance)1
L(1O1)
4.9
4.9
8.0
mm
Nominal External Tracking
(Creepage)1
L(1O2)
4.01
4.01
8.0
mm
Minimum Internal Gap
(Internal Clearance)
0.014
0.014
0.014
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
VRMS
Erosion Depth
ED
0.040
0.019
0.019
mm
Resistance (Input-Output)2
RIO
1012
1012
1012
Capacitance (Input-Output)2
CIO
f = 1 MHz
1.0
2.0
2.0
pF
Input Capacitance3
CI
Non-I2C Channel
4.0
4.0
4.0
pF
I2C Channel
10
10
10
pF
Notes:
1.
VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-8 and SOIC-16 packages and
8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for
component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8
and SOIC-16 packages and 7.6 mm minimum for the WB SOIC-16 package.
2.
To determine resistance and capacitance, the Si860x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1–4, SO-
8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3.
Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC-8
SOIC-16
WB SOIC-16
Basic Isolation Group
Material Group
I
I
Installation Classification
Rated Mains Voltages < 150 VRMS
I-IV
I-IV
Rated Mains Voltages < 300 VRMS
I-III
I-IV
Rated Mains Voltages < 400 VRMS
I-II
I-III
Rated Mains Voltages < 600 VRMS
I-II
I-III


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