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FDD10N20LZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDD10N20LZ
Spiegazioni elettronici  Uninterruptible Power Supply
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD10N20LZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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November 2013
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. C1
www.fairchildsemi.com
1
FDD10N20LZ
N-Channel UniFETTM MOSFET
200 V, 7.6 A, 360 m
Ω
Features
•RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D-PAK
G
S
D
G
D
S
MOSFET Maximum Ratings T
C = 25
oC unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FDD10N20LZTM
Unit
VDSS
Drain to Source Voltage
200
V
VGSS
Gate to Source Voltage
±20
V
ID
Drain Current
- Continuous (TC = 25oC)
7.6
A
- Continuous (TC = 100oC)
4.5
IDM
Drain Current
- Pulsed
(Note 1)
30
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
121
mJ
IAR
Avalanche Current
(Note 1)
7.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25oC)
83
W
- Derate Above 25oC0.7
W/oC
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
oC
Symbol
Parameter
FDD10N20LZTM
Unit
RθJC
Thermal Resistance, Junction to Case, Max.
1.5
oC/W
RθJA
Thermal Resistance, Junction to Ambient, Max.
110


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