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FDD10N20LZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDD10N20LZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 ©2010 Fairchild Semiconductor Corporation FDD10N20LZ Rev. C1 www.fairchildsemi.com 1 FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Ω Features •RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- ergy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. D-PAK G S D G D S MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FDD10N20LZTM Unit VDSS Drain to Source Voltage 200 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25oC) 7.6 A - Continuous (TC = 100oC) 4.5 IDM Drain Current - Pulsed (Note 1) 30 A EAS Single Pulsed Avalanche Energy (Note 2) 121 mJ IAR Avalanche Current (Note 1) 7.6 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 83 W - Derate Above 25oC0.7 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD10N20LZTM Unit RθJC Thermal Resistance, Junction to Case, Max. 1.5 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 110 |
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