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LM359M Scheda tecnica(PDF) 2 Page - Texas Instruments

Il numero della parte LM359M
Spiegazioni elettronici  Dual, High Speed, Programmable, Current Mode (Norton) Amplifiers
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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LM359M Scheda tecnica(HTML) 2 Page - Texas Instruments

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(1)
Mirror gain is the current gain of the current mirror which is used as the non-inverting input.
ΔMirror Gain is the % change in
LM359
SNOSBT4C – MAY 1999 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Supply Voltage
22 VDC or ±11 VDC
D Package
1W
Power Dissipation(3)
NFF Package
750 mW
D Package
+150°C
Maximum TJ
NFF Package
+125°C
147°C/W still air
D Package
θjA
110°C/W with 400
linear feet/min air flow
Thermal Resistance
100°C/W still air
NFF Package
θjA
75°C/W with 400
linear feet/min air flow
Input Currents, IIN(+) or IIN(−)
10 mADC
Set Currents, ISET(IN) or ISET(OUT)
2 mADC
Operating Temperature Range
0°C to +70°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature
(Soldering, 10 sec.)
260°C
PDIP Package
Soldering (10 sec.)
260°C
Soldering Information
Vapor Phase (60 sec.)
215°C
SOIC Package
Infrared (15 sec.)
220°C
(1)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3)
See Figure 22.
Electrical Characteristics
ISET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Units
Open Loop Voltage
Vsupply = 12V, RL = 1k, f = 100 Hz
62
72
dB
Gain
TA = 125°C
68
dB
Bandwidth Unity Gain
RIN = 1 kΩ, Ccomp = 10 pF
15
30
MHz
Gain Bandwidth Product,
RIN = 50Ω to 200Ω
200
400
MHz
Gain of 10 to 100
Unity Gain
RIN = 1 kΩ, Ccomp = 10 pF
30
Slew Rate
V/
μs
Gain of 10 to 100
RIN < 200Ω
60
Amplifier to Amplifier
f = 100 Hz to 100 kHz, RL = 1k
−80
dB
Coupling
at 2 mA IIN(+), ISET = 5 μA, TA = 25°C
0.9
1.0
1.1
μA/μA
Mirror Gain(1)
at 0.2 mA IIN(+), ISET = 5 μA Over Temp.
0.9
1.0
1.1
μA/μA
at 20
μA IIN(+), ISET = 5 μA Over Temp.
0.9
1.0
1.1
μA/μA
ΔMirror Gain(1)
at 20
μA to 0.2 mA IIN(+) Over Temp, ISET = 5 μA
3
5
%
Inverting Input, TA = 25°C
8
15
μA
Input Bias Current
Over Temp.
30
μA
Input Resistance (
βre)
Inverting Input
2.5
k
Ω
Output Resistance
IOUT = 15 mA rms, f = 1 MHz
3.5
Ω
AI for two different mirror currents at any given temperature.
2
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM359


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