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LB11669MC Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte LB11669MC
Spiegazioni elettronici  Two-Phase Half-Wave Driver
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LB11669MC
No.A2075-2/4
Recommended Operating Conditions
at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Inflow current range
IIN
5 to 25
mA
Common-mode input voltage range
VCOM
0.2 to VIN -2.3
V
Electrical Characteristics
at Ta
= 25°C, VCC=24V, R1=1kΩ, unless otherwise specified.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
VIN voltage
VIN
IIN = 6mA
5.95
6.3
6.65
V
CT capacitor charging current
ICT1
CT = 0.5V
1.8
2.55
3.4
μA
Capacitor dis-charging current
ICT2
CT = 6.0V
0.15
0.23
0.31
μA
Capacitor charging / dis-charging
current ratio
RCT
RCT = ICT1 / ICT2
10.5
11
14.5
CT charging voltage
VCTH
VCT / VIN
74
79
84
%
CT dis-charging voltage
VCTL
VCT / VIN
41
46
51
%
Output limit withstand voltage
VOLM
IO = 100mA
49
52
55
V
Output saturation voltage
VOL1
IO = 200mA
0.85
1.1
V
Hall input sensitivity
VHN
Including offset and hysteresis
±15
±30
mV
FG/RD output saturation voltage
VFG/RD
IFG/RD = 5mA
0.15
0.3
V
FG/RD output leak current
IFGL/RDL
VFG/RD = 14V
0.1
10
μA
Thermal protection function
operating temperature
TSD
Design target value *
180
°C
* Design target value and is not measured.
Package Dimensions
unit : mm (typ)
3426A
SANYO : SOIC10
4.9
6
10
5
1
0.21
0.41
1.0
Pd max – Ta
0
800
600
400
200
1000
– 30
90
60
30
0120
390
Ambient temperature, Ta – °C
Specified board : 114.3
×76.1×1.6mm3
glass epoxy


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