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SB05-05C-TB-E Scheda tecnica(PDF) 1 Page - ON Semiconductor

Il numero della parte SB05-05C-TB-E
Spiegazioni elettronici  Schottky Barrier Diode
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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71812 TKIM/42506SB MSIM TB-00000745 No.A0409-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
SB05-05C
Schottky Barrier Diode
50V, 0.5A, Low IR, Single CP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Marking
Electrical Connection
1 : Anode
2 : No Contact
3 : Cathode
CP
12
3
2.9
0.95
0.4
0.1
TB
SB05-05C-TB-E
B
3
12
Applications
High frequency rectification (switching regulators, converters, choppers)
Features
Low forward voltage (VF max=0.55V)
Fast reverse recovery time (trr max=10ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
50
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
55
V
Average Output Current
I
O
500
mA
Surge Forward Current
I
FSM
50Hz sine wave, 1 cycle
5
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Package Dimensions
unit : mm (typ)
7013A-004
Ordering number : ENA0409A


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