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MTB020N03KQ8 Scheda tecnica(PDF) 2 Page - Cystech Electonics Corp. |
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MTB020N03KQ8 Scheda tecnica(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C143Q8 Issued Date : 2015.11.13 Revised Date : Page No. : 2/9 MTB020N03KQ8 CYStek Product Specification Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TA=25 °C, VGS=10V 10.2 Continuous Drain Current @ TA=100 °C, VGS=10V ID 6.5 Pulsed Drain Current IDM 40 *1 Avalanche Current IAS 10 A Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω EAS 15 Repetitive Avalanche Energy @ L=0.05mH EAR 1.5 *2 mJ TA=25 °C 3.1 Total Power Dissipation TA=100 °C PD 1.2 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case Rth,j-c 25 Thermal Resistance, Junction-to-ambient (Note) Rth,j-a 40 °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V, ID=250μA VGS(th) 1.0 - 2.5 V VDS = VGS, ID=250μA GFS - 9 - S VDS =5V, ID=8A IGSS - - ± 10 VGS=±20V - - 1 VDS =30V, VGS =0V IDSS - - 10 μA VDS =24V, VGS =0V, Tj=85 °C - 12.8 17 VGS =10V, ID=9A *RDS(ON) - 17.4 23 mΩ VGS =4.5V, ID=7A Dynamic Qg (VGS=10V) *1, 2 - 12 - Qg (VGS=5V) *1, 2 - 6.9 Qgs *1, 2 - 1.8 - Qgd *1, 2 - 3.4 - nC ID=9A, VDS=15V, VGS=10V Ciss - 450 - Coss - 79 - Crss - 60 - pF VGS=0V, VDS=15V, f=1MHz Rg - 8.8 - Ω f=1MHz |
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