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FW216A Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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FW216A Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 5 page FW216A No. A0176-4/5 Total Gate Charge, Qg -- nC VGS -- Qg IT16706 IT16705 0 0 1 2 3 4 5 6 7 6 4 10 8 9 23 15 VDS=10V ID=4.5A A S O Drain to Source Voltage, VDS -- V 0.01 0.1 1.0 10 23 5 7 23 5 7 23 5 7 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 ID=4.5A 100ms 1ms 10ms 100 μs Operation in this area is limited by RDS(on). DC operation IDP=18A (PW≤10μs) 10s Ta=25 °C Single pulse 1unit When mounted on ceramic substrate (2000mm2 ×0.8mm) IT16707 IT16708 Ambient Temperature, Ta -- °C PD -- Ta 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.2 2.0 1.6 2.5 1unit When mounted on ceramic substrate (2000mm2 ×0.8mm), PW≤10s To tal dissipation Allowable Power Dissipation(FET2), PD -- W PD (FET1) -- PD (FET2) 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 1.6 1.4 1.8 1.6 2.0 2.0 When mounted on ceramic substrate (2000mm2 ×0.8mm), PW≤10s |
Codice articolo simile - FW216A |
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Descrizione simile - FW216A |
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