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74LVC04ADTR2G Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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74LVC04ADTR2G Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 7 page 74LVC04A www.onsemi.com 4 AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) Symbol Parameter Conditions −40 5C to +855C −40 5C to +1255C Unit Min Typ1 Max Min Typ1 Max tpd Propagation Delay (Note 5) VCC = 1.2 V − 14.0 − − − − ns VCC = 1.65 V to 1.95 V 0.5 3.7 8.8 0.5 − 10.2 ns VCC = 2.3 V to 2.7 V 0.5 2.2 5.0 0.5 − 5.8 VCC = 2.7 V 0.5 2.1 5.5 0.5 − 7.0 VCC = 3.0 V to 3.6 V 0.5 2.0 4.5 0.5 − 6.0 tsk(0) Output Skew Time (Note 6) VCC = 3.0 V to 3.6 V − − 1.0 − − 1.5 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Typical values are measured at TA = 25 °C and VCC = 3.3 V, unless stated otherwise. 5. tpd is the same as tPLH and tPHL. 6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition TA = +25°C Unit Min Typ Max VOLP Dynamic LOW Peak Voltage (Note 7) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V VOLV Dynamic LOW Valley Voltage (Note 7) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 4.0 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 5.0 pF CPD Power Dissipation Capacitance (Note 8) Per input; VI = GND or VCC pF VCC = 1.65 V to 1.95 V 3.9 VCC = 2.3 V to 2.7 V 7.1 VCC = 3.0 V to 3.6 V 9.9 8. CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching S(CL x VCC2 x fo) = sum of the outputs. |
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