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CS5150HGD16 Scheda tecnica(PDF) 3 Page - ON Semiconductor |
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CS5150HGD16 Scheda tecnica(HTML) 3 Page - ON Semiconductor |
3 / 17 page CS5150H http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (0°C < TA < +70°C; 0°C < TJ < +125°C; 8.0 V < VCC1 < 14 V; 5.0 V < VCC2 < 20 V; DAC Code: VID2 = VID1 = VID0 = 1; VID3 = 0; CVGATE(L) and CVGATE(H) = 1.0 nF; COFF = 330 pF; CSS = 0.1 μF, unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Error Amplifier VFB Bias Current VFB = 0 V − 0.3 1.0 μA Open Loop Gain 1.25 V < VCOMP < 4.0 V; Note 2 50 60 − dB Unity Gain Bandwidth Note 2 500 3000 − kHz COMP SINK Current VCOMP = 1.5 V; VFB = 3.0 V; VSS > 2.0 V 0.4 2.5 8.0 mA COMP SOURCE Current VCOMP = 1.2 V; VFB = 2.7 V; VSS = 5.0 V 30 50 80 μA COMP CLAMP Current VCOMP = 0 V; VFB = 2.7 V 0.4 1.0 1.6 mA COMP High Voltage VFB = 2.7 V; VSS = 5.0 V 4.0 4.3 5.0 V COMP Low Voltage VFB = 3.0 V − 160 600 mV PSRR 8.0 V < VCC1 < 14 V @ 1.0 kHz; Note 2 60 85 − dB VCC1 Monitor Start Threshold Output switching 3.75 3.90 4.05 V Stop Threshold Output not switching 3.70 3.85 4.00 V Hysteresis Start−Stop − 50 − mV DAC Input Threshold VID0, VID1, VID2, VID3 1.00 1.25 2.40 V Input Pull Up Resistance VID0, VID1, VID2, VID3 25 50 110 kΩ Pull Up Voltage − 4.85 5.00 5.15 V Accuracy (all codes except 11111) Measure VFB = COMP, 25°C ≤ TJ ≤ 125°C − − 1.0 % VID3 VID2 VID1 VID0 1 1 1 1 − 1.2191 1.2440 1.2689 V 1 1 1 0 − 2.1186 2.1400 2.1614 V 1 1 0 1 − 2.2176 2.2400 2.2624 V 1 1 0 0 − 2.3166 2.3400 2.3634 V 1 0 1 1 − 2.4156 2.4400 2.4644 V 1 0 1 0 − 2.5146 2.5400 2.5654 V 1 0 0 1 − 2.6136 2.6400 2.6664 V 1 0 0 0 − 2.7126 2.7400 2.7674 V 0 1 1 1 − 2.8116 2.8400 2.8684 V 0 1 1 0 − 2.9106 2.9400 2.9694 V 0 1 0 1 − 3.0096 3.0400 3.0704 V 0 1 0 0 − 3.1086 3.1400 3.1714 V 0 0 1 1 − 3.2076 3.2400 3.2724 V 0 0 1 0 − 3.3066 3.3400 3.3734 V 0 0 0 1 − 3.4056 3.4400 3.4744 V 0 0 0 0 − 3.5046 3.5400 3.5754 V 2. Guaranteed by design, not 100% tested in production. |
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