DESCRIPTION

SYMBOL

CONDITIONS

MIN

TYP.

MAX

UNIT

Drain-to-Source Breakdown Voltage

(Gate Shorted to Source)

µA

200

V

Temperature Coefficient of the Drain-to-Source

Breakdown Voltage

∆BV

∆T

J

0.29

V/

°C

Gate Threshold Voltage

2.0

4.0

V

Gate-to-Source Leakage Current

± 20V

°C

°C

±100

±200

nA

Drain-to-Source Leakage Current (Zero Gate

Voltage Drain Current)

•BV

DSS

°C

°C

25

250

µA

Static Drain-to-Source On-State Resistance (1)

°C

°C

°C

1.5

0.085

0.090

Ω

Forward Transconductance (1)

≥ 15 V; I

9

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

3500

700

110

pF

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Ω

35

190

170

130

ns

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

55

8

30

115

22

60

nC

Body Diode Forward Voltage (1)

MSAE

MSAF

1.2

1.9

V

Reverse Recovery Time (Body Diode)

MSAE

-di/dt = 100 A/

µs,

MSAF

50

950

ns

Reverse Recovery Charge

MSAE

di/dt = 100 A/

µs,

MSAF

tbd

9

µC

Electrical Parameters @ 25

°°C (unless otherwise specified)

Notes

(1)

Pulse test, t

≤≤ 300 µµs, duty cycle δδ ≤≤ 2%

(2)

Microsemi Corp. does not manufacture the mosfet die; contact company for details.

MSAER30N20A

MSAFR30N20A