2N3700 datasheet(2/2 Pages) MICROSEMI

Il numero della parte	2N3700

Spiegazioni elettronici	NPN BIPOLAR TRANSISTOR

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Produttore elettronici	MICROSEMI [Microsemi Corporation]

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CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Off Characteristics

Collector-Emitter Breakdown Voltage

(IC = 30 mAdc, IB = 0)

BVCEO

80

--

Vdc

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

BVCEO

140

--

Vdc

Emitter-Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

BVEBO

7.0

--

Vdc

Collector Cutoff Current

(VCB = 90 Vdc, IE = 0)

(VCB = 90 Vdc, IE = 0, TA = + 150

o

C

ICES

--

0.01

10

µAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

--

10

nAdc

D.C. Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)(1)

(IC = 150 mAdc, VCE = 10 Vdc)(1)

(IC = 150 mAdc, VCE = 10 Vdc, TC = -55

o

C)(1)

(IC = 500 mAdc, VCE = 10 Vdc)(1)

(IC = 1.0 mAdc, VCE = 10 Vdc)

hFE

50

90

100

40

50

15

200

--

300

--

200

--

Collector-Emitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(Sat)

--

0.2

0.5

Vdc

Base-Emitter Saturation Voltage(1)

(IC = 150 mAdc, IB 15 mAdc)

VBE(Sat)

--

1.1

Vdc

Small-signal short circuit forward current transfer ratio

(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)

/hfe/

5

20

Output Capacitance

(VCB = 10 Vdc, IE = 0, 100kHz < f < 1MHz )

COBO

--

12

pf

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, 100kHz < f < 1MHz)

CIBO

--

60

pf

Small—Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 MHz)

hfe

80

400

--

Collector Base Time Constant

(IE = 10 mAdc, VCB = 10 Vdc, f = 79.8 MHz)

rb’CC

400

ps

Noise Figure

(IC = 100 uAdc, VCE = 10 Vdc, Rg = 1.0 k ohms, f = 200Hz)

NF

--

4

dB

Electrical Parameters (TA @ 25

°°C unless otherwise specified)

2N3700

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 1.0%.

Datasheet# MSCO279A 5/23/97

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