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1N5196UR Scheda tecnica(PDF) 1 Page - Microsemi Corporation

Il numero della parte 1N5196UR
Spiegazioni elettronici  LL-35 High Voltage / Current Low Leakage Glass Diodes
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Produttore elettronici  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

1N5196UR Scheda tecnica(HTML) 1 Page - Microsemi Corporation

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LL-35 High Voltage / Current
Low Leakage Glass Diodes
1N5194UR
thru
1N5196UR
Absolute Maximum Ratings
Symbol
Value
Unit
Power Dissipation at T
AMB= 25
o C
P
tot
500
mW
Average Forward Rectified Current at T
AMB= 25
o C
I
AV
200
mAmps
Operating and Storage Temperature Range
T
O&ST
-55 to 200
oC
Power derating at T
AMB
= 25
oC
P
dr
3.0 (Max)
mW/
oC
Detail Specifications
Features
Six Sigma quality
Humidity proof glass
Metallurgically bonded
Thermally matched system
No thermal fatigue
High surge capability
Sigma Bond™ plated contacts
100% guaranteed solderability
Use Advantages
Used in applications where the highest voltage and current performance of
small signal devices are required.
In instrument applications for voltage isolation, pulse clipping and glue logic.
Ideal for use in (Medical, Military and Aero/Space).
Peak
Maximum
Maximum
Maximum Forward
Maximum
Maximum
Inverse
Reverse
Average Rectified Current
Voltage
Reverse Leakage Current
Surge
Voltage
Working Voltage
_______________
Drop
_______________
Current
(MIN.)
(I
O)(IO)@ IF = 100mA
(I
R) @ VRWM
(I
FSM)
@0.1 mA
(V
RMM)
25° C
150° C
(V
F)
25° C
150° C
(NOTE 1)
Type
Volts
Volts
mAmps
mAmps
Volt
nA
µA
Amps
1N5194
80
70
200
50
1.0
25
5
2
1N5195
200
180
200
50
1.0
25
5
2
1N5196
250
225
200
50
1.0
25
5
2
Note 1: One half cycle, 60 Hz. sine wave.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Dia .
.063-.067"
1.6-1.7m m
0.10"R E F
2.54 m m R E F
Le ngth
0.13-0.146 "
3.30-3.70 m m
Bo th E n d C a p s
0.016-.022 "
0.41-0.55 m m
LL-35 MINI MELF
Package Type DO-213AA


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