Si7998DP

www.vishay.com

Vishay Siliconix

S14-1941-Rev. C, 29-Sep-14

3

Document Number: 68970

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Turn-On Delay Time

Channel-1

Ω

Channel-2

Ω

Ch-1

-

20

30

ns

Ch-2

-

26

40

Rise Time

Ch-1

-

15

25

Ch-2

-

17

30

Turn-Off Delay Time

Ch-1

-

22

35

Ch-2

-

35

55

Fall Time

Ch-1

-

10

15

Ch-2

-

13

20

Turn-On Delay Time

Channel-1

Ω

Channel-2

Ω

Ch-1

-

10

15

Ch-2

-

13

20

Rise Time

Ch-1

-

10

15

Ch-2

-

10

15

Turn-Off Delay Time

Ch-1

-

22

35

Ch-2

-

32

50

Fall Time

Ch-1

-

10

15

Ch-2

-

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Ch-1

-

-

13

A

Ch-2

-

-

30

Ch-1

-

-

30

Ch-2

-

-

80

Body Diode Voltage

Ch-1

-

0.8

1.2

V

Ch-2

-

0.8

1.2

Body Diode Reverse Recovery Time

Channel-1

Channel-2

Ch-1

-

20

30

ns

Ch-2

-

27

40

Body Diode Reverse Recovery Charge

Ch-1

-

15

25

nC

Ch-2

-

22

35

Reverse Recovery Fall Time

Ch-1

-

11

-

ns

Ch-2

-

15

-

Reverse Recovery Rise Time

Ch-1

-

9

-

Ch-2

-

12

-

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT