SI7212DN datasheet(1/12 Pages) TFUNK

Il numero della parte	SI7212DN

Spiegazioni elettronici	Dual N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si7212DN

Document Number: 73128

S09-1815-Rev. F, 14-Sep-09

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

100 % Rg Tested

•

Space Savings Optimized for Fast Switching

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Synchronous Rectification

•

Intermediate Driver

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

30

0.036 at VGS = 10 V

6.8

7

0.039 at VGS = 4.5 V

6.6

PowerPAK® 1212-8

Bottom View

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

3.30 mm

Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free)

Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

6.8

4.9

A

TA = 85 °C

4.9

3.5

Pulsed Drain Current

IDM

20

Continuous Source Current (Diode Conduction)a

IS

2.2

1.1

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

A

Single Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipationa

TA = 25 °C

PD

2.6

1.3

W

TA = 85 °C

1.4

0.69

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

38

48

°C/W

Steady State

77

94

Maximum Junction-to-Case (Drain)

Steady State

RthJC

4.3

5.4

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