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SI4916DY Scheda tecnica(PDF) 1 Page - Vishay Telefunken

Il numero della parte SI4916DY
Spiegazioni elettronici  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Vishay Siliconix
Si4916DY
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
Halogen-free According to IEC 61249-2-21
Available
LITTLE FOOT® Plus Integrated Schottky
100 % Rg Tested
APPLICATIONS
DC/DC Converters
- Notebook
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
Channel-1
30
0.018 at VGS = 10 V
10
6.6
0.023 at VGS = 4.5 V
8.5
Channel-2
0.018 at VGS = 10 V
10.5
8.9
0.022 at VGS = 4.5 V
9.3
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V at 1.0 A
2.0
D1
G1
D1
S1/D2
G2
S1/D2
S2
S1/D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G2
S2
N-Channel 2
MOSFET
Schottky Diode
G1
N-Channel 1
MOSFET
S1/D2
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)
a, b
TC = 25 °C
ID
10
10.5
A
TC = 70 °C
88.3
TA = 25 °C
7.5a, b, c
7.8a, b, c
TA = 70 °C
6a ,b, c
6.3a, b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
40
40
Continuous Source-Drain Diode Current
TC = 25 °C
IS
33.2
TA = 25 °C
1.7a, b, c
1.8a, b, c
PulseD Source-Drain Current
ISM
40
40
Single-Pulse Avalanche Current
L = 0.1 mH
IAS
15
Single-Pulse Avalanche Energy
EAS
11.2
mJ
Maximum Power Dissipationa, b
TC = 25 °C
PD
3.3
3.5
W
TC = 70 °C
2.1
2.2
TA = 25 °C
1.9a, b, c
2.0a, b, c
TA = 70 °C
1.2a, b, c
1.3a, b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C


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