SI4816BD datasheet(5/13 Pages) TFUNK

Il numero della parte	SI4816BD

Spiegazioni elettronici	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 73026

S09-0394-Rev. D, 09-Mar-09

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5

Vishay Siliconix

Si4816BDY

CHANNEL-1 TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Safe Operating Area

100

1

0.1

1

10

100

0.01

10

TC = 25 °C

Single Pulse

0.1

IDM Limited

ID(on)

Limited

BVDSS Limited

1 ms

10 ms

100 ms

1 s

*

DS(on)

Limited by R

VDS –

>

Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

DC

10 s

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

0.1

0.01

10- 4

10- 3

10- 2

10- 1

1

10

600

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 100 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

100

Normalized Thermal Transient Impedance, Junction-to-Foot

10- 3

10- 2

110

10- 1

10- 4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

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