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SI4776DY Scheda tecnica(PDF) 4 Page - Vishay Telefunken

Il numero della parte SI4776DY
Spiegazioni elettronici  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Produttore elettronici  TFUNK [Vishay Telefunken]
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SI4776DY Scheda tecnica(HTML) 4 Page - Vishay Telefunken

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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
Vishay Siliconix
Si4776DY
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
V
SD - Source-to-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
0
25
50
75
100
125
150
T
J -Temperature (°C)
20 V
10 V
30 V
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.010
0.020
0.030
0.040
0.050
02468
10
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
T
J = 25 °C
I
D = 10 A
0
30
60
90
120
150
0.001
0.01
0.1
1
10
Time (s)
Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
100 μs
100 ms
Limited by R
DS(on)*
1 ms
I
DM Limited
T
C = 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D Limited


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