SI4202DY datasheet(4/10 Pages) TFUNK

Il numero della parte	SI4202DY

Spiegazioni elettronici	Dual N-Channel 30 V (D-S) MOSFET

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Document Number: 67092

S10-2602-Rev. A, 15-Nov-10

Vishay Siliconix

Si4202DY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

V

SD - Source-to-Drain Voltage (V)

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID =5mA

ID = 250 μA

T

J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.012

0.024

0.036

0.048

0.060

012

345

67

89

10

TJ =25 °C

TJ = 125 °C

ID =8A

V

GS - Gate-to-Source Voltage (V)

Time (s)

0

5

10

15

20

25

30

0.01

1

100

Safe Operating Area

0.01

100

1

100

0.01

0.1

10 ms

0.1

1

10

TA = 25 °C

Single Pulse

1ms

BVDSS Limited

1s

10 s

100 ms

Limited by RDS(on)*

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

DC

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