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SIZ710DT Scheda tecnica(PDF) 8 Page - Vishay Telefunken |
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SIZ710DT Scheda tecnica(HTML) 8 Page - Vishay Telefunken |
8 / 14 page www.vishay.com 8 Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 Vishay Siliconix SiZ710DT This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =10Vthru4V VGS =3V VGS =2V VDS - Drain-to-Source Voltage (V) 0.000 0.001 0.002 0.003 0.004 0.005 0 20406080 100 VGS =4.5 V VGS =10V ID - Drain Current (A) 0 2 4 6 8 10 0 8 16 24 32 40 VDS =16V ID =20A VDS =5V VDS =10V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 ID =20A VGS =10V, VGS =4.5 V TJ - Junction Temperature (°C) |
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