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SI4010DY Scheda tecnica(PDF) 2 Page - Vishay Telefunken |
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SI4010DY Scheda tecnica(HTML) 2 Page - Vishay Telefunken |
2 / 10 page Si4010DY www.vishay.com Vishay Siliconix S13-2179-Rev. A, 14-Oct-13 2 Document Number: 62915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 μA 14 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 μA 1 2.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = + 20 V, - 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 μA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0028 0.0034 VGS = 4.5 V, ID = 10 A 0.0035 0.0044 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 105 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3595 pF Output Capacitance Coss 1040 Reverse Transfer Capacitance Crss 79 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 51 77 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 22.5 34 Gate-Source Charge Qgs 8.6 Gate-Drain Charge Qgd 4 Output Charge Qoss VDS = 15 V, VGS = 0 V 30.5 Gate Resistance Rg f = 1 MHz 0.5 1.25 2 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 24 48 ns Rise Time tr 17 34 Turn-Off Delay Time td(off) 25 50 Fall Time tf 12 24 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 1.5 V, Rg = 1 12 24 Rise Time tr 10 20 Turn-Off Delay Time td(off) 30 60 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.4 A Pulse Diode Forward Current ISM 100 Body Diode Voltage VSD IS = 5 A, 0.73 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 36 70 ns Body Diode Reverse Recovery Charge Qrr 24 48 nC Reverse Recovery Fall Time ta 16 ns Reverse Recovery Rise Time tb 20 |
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