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SI4010DY Scheda tecnica(PDF) 2 Page - Vishay Telefunken

Il numero della parte SI4010DY
Spiegazioni elettronici  N-Channel 30 V (D-S) MOSFET
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Si4010DY
www.vishay.com
Vishay Siliconix
S13-2179-Rev. A, 14-Oct-13
2
Document Number: 62915
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 μA
14
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 5.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 μA
1
2.3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = + 20 V, - 16 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS  5 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0028
0.0034
VGS = 4.5 V, ID = 10 A
0.0035
0.0044
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
105
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
3595
pF
Output Capacitance
Coss
1040
Reverse Transfer Capacitance
Crss
79
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
51
77
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
22.5
34
Gate-Source Charge
Qgs
8.6
Gate-Drain Charge
Qgd
4
Output Charge
Qoss
VDS = 15 V, VGS = 0 V
30.5
Gate Resistance
Rg
f = 1 MHz
0.5
1.25
2
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
24
48
ns
Rise Time
tr
17
34
Turn-Off Delay Time
td(off)
25
50
Fall Time
tf
12
24
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 1.5 V, Rg = 1 
12
24
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
30
60
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
5.4
A
Pulse Diode Forward Current
ISM
100
Body Diode Voltage
VSD
IS = 5 A,
0.73
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
36
70
ns
Body Diode Reverse Recovery Charge
Qrr
24
48
nC
Reverse Recovery Fall Time
ta
16
ns
Reverse Recovery Rise Time
tb
20


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