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SI6562CDQ Scheda tecnica(PDF) 8 Page - Vishay Telefunken |
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SI6562CDQ Scheda tecnica(HTML) 8 Page - Vishay Telefunken |
8 / 17 page www.vishay.com 8 Document Number: 68954 S-82575-Rev. A, 27-Oct-08 Vishay Siliconix Si6562CDQ New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =5thru 3 V VGS =1.5 V VGS =2 V VGS =2.5 V VDS - Drain-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 VGS =4.5 V VGS =2.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 7 14 21 28 35 VDS =16 V ID =5.1 A VDS =10 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 300 600 900 1200 1500 024 6 8 10 12 14 16 18 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V,2.5 V ID =5.1 A TJ -Junction Temperature (°C) |
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