SI3585CD datasheet(2/16 Pages) TFUNK

Il numero della parte	SI3585CD

Spiegazioni elettronici	N- and P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si3585CDV

www.vishay.com

2

Document Number: 67470

S13-1562-Rev. C, 15-Jul-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

20

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 20

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

N-Ch

15

mV/°C

ID = - 250 µA

P-Ch

- 16.2

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

N-Ch

- 2.8

ID = - 250 µA

P-Ch

2.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

± 100

nA

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS 5 V, VGS = 4.5 V

N-Ch

12

A

VDS - 5 V, VGS = - 4.5 V

P-Ch

- 5

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 2.5 A

N-Ch

0.048

0.058



VGS = - 4.5 V, ID = - 1.9 A

P-Ch

0.162

0.195

VGS = 2.5 V, ID = 1 A

N-Ch

0.065

0.078

VGS = - 2.5 V, ID = - 1 A

P-Ch

0.263

0.316

Forward Transconductanceb

gfs

VDS = 10 V, ID = 35 A

N-Ch

12

S

VDS = - 10 V, ID = - 1.9 A

P-Ch

1

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 10 V, VGS = 0 V, f = 1 MHz

N-Ch

150

pF

P-Ch

210

Output Capacitance

Coss

N-Ch

53

P-Ch

50

Reverse Transfer Capacitance

Crss

N-Ch

22

P-Ch

35

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 3.5 A

N-Ch

3.2

4.8

nC

VDS = - 10 V, VGS = - 10 V, ID = - 1.9 A

P-Ch

6

9

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 3.5 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 1.9 A

N-Ch

1.6

2.4

P-Ch

2.9

4.3

Gate-Source Charge

Qgs

N-Ch

0.3

P-Ch

0.6

Gate-Drain Charge

Qgd

N-Ch

0.4

P-Ch

0.9

Gate Resistance

Rg

f = 1 MHz

N-Ch

0.9

4.8

9.6



P-Ch

1.2

6.2

12.4

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