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SI2302DDS Scheda tecnica(PDF) 2 Page - Vishay Telefunken

Il numero della parte SI2302DDS
Spiegazioni elettronici  N-Channel 20 V (D-S) MOSFET
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Document Number: 63653
S11-2528-Rev. A, 26-Dec-11
Vishay Siliconix
Si2302DDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test: Pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.40
0.85
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 70 °C
75
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 4.5 V
6A
Drain-Source On-Resistancea
RDS(on)
VGS = 4.5 V, ID = 3.6 A
0.045
0.057
Ω
VGS = 2.5 V, ID = 3.1 A
0.056
0.075
Forward Transconductancea
gfs
VDS = 5 V, ID = 3.6 A
13
S
Diode Forward Voltage
VSD
IS = 0.95 A, VGS = 0 V
0.7
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
3.5
5.5
nC
Gate-Source Charge
Qgs
0.6
Gate-Drain Charge
Qgd
0.45
Gate Resistance
Rg
f = 1 MHz
2
4
8
Ω
Switching
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 2.78 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
815
ns
Rise Time
tr
715
Turn-Off Delay Time
td(off)
30
45
Fall Time
tf
715
Source-Drain Reverse Recovery Time
trr
IF = 3.6 A, dI/dt = 100 A/µs
8.5
15
Body Diode Reverse Recovery Charge
Qrr
24
nC
Output Characteristics
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS =5 V thru 2 V
VGS =1 V
VGS =1.5 V
Transfer Characteristics
0
2
4
6
8
10
0.0
0.4
0.8
1.2
1.6
2.0
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = - 55 °C


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