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SI2302DDS Scheda tecnica(PDF) 2 Page - Vishay Telefunken |
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SI2302DDS Scheda tecnica(HTML) 2 Page - Vishay Telefunken |
2 / 8 page www.vishay.com 2 Document Number: 63653 S11-2528-Rev. A, 26-Dec-11 Vishay Siliconix Si2302DDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.40 0.85 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 75 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 4.5 V 6A Drain-Source On-Resistancea RDS(on) VGS = 4.5 V, ID = 3.6 A 0.045 0.057 Ω VGS = 2.5 V, ID = 3.1 A 0.056 0.075 Forward Transconductancea gfs VDS = 5 V, ID = 3.6 A 13 S Diode Forward Voltage VSD IS = 0.95 A, VGS = 0 V 0.7 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 3.5 5.5 nC Gate-Source Charge Qgs 0.6 Gate-Drain Charge Qgd 0.45 Gate Resistance Rg f = 1 MHz 2 4 8 Ω Switching Turn-On Delay Time td(on) VDD = 10 V, RL = 2.78 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω 815 ns Rise Time tr 715 Turn-Off Delay Time td(off) 30 45 Fall Time tf 715 Source-Drain Reverse Recovery Time trr IF = 3.6 A, dI/dt = 100 A/µs 8.5 15 Body Diode Reverse Recovery Charge Qrr 24 nC Output Characteristics 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 2 V VGS =1 V VGS =1.5 V Transfer Characteristics 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C |
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