3N70KG-TF1-T datasheet(3/6 Pages) UTC

Il numero della parte	3N70KG-TF1-T

Spiegazioni elettronici	N-CHANNEL JUNCTIN SILICON FET

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Produttore elettronici	UTC [Unisonic Technologies]

Homepage	http://www.utc-ic.com

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3 / 6 page

3N70K-MK

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R205-012.a



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

700

V

Drain-Source Leakage Current

IDSS

VDS = 700 V, VGS = 0 V

10

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

nA

Reverse

VGS = -30 V, VDS = 0 V

-100

nA

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA,Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 µA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 1.5A

4.20

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25 V, VGS = 0 V,

f = 1MHz

422 510

pF

Output Capacitance

COSS

37

55

pF

Reverse Transfer Capacitance

CRSS

4.4

11

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 30V, ID = 0.5A,

RG = 25Ω (Note 1, 2)

42

ns

Turn-On Rise Time

tR

14

ns

Turn-Off Delay Time

tD(OFF)

94

ns

Turn-Off Fall Time

tF

14

ns

Total Gate Charge

QG

VDS= 50V,ID= 1.3A,

VGS= 10 V (Note 1, 2)

13.7 16

nC

Gate-Source Charge

QGS

4.3

nC

Gate-Drain Charge

QGD

1.38

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

3.0

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

12

A

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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