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1N50-KW Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte 1N50-KW
Spiegazioni elettronici  N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
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1N50-KW
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R205-053.b
ABSOLUTE MAXIMUM RATINGS (T
C = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
1
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
50
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TA=25°С)
PD
0.6
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 100mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
180
°С/W
Junction to Case
θJC
88
°С/W
ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
500
V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
10
μA
Forward
VGS=30V, VDS=0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS
/TJ ID=250μA
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3.0
5.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
8.6
10
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
135
pF
Output Capacitance
COSS
17
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
4.7
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
16.5
ns
Turn-On Rise Time
tR
30
ns
Turn-Off Delay Time
tD(OFF)
23
ns
Turn-Off Fall Time
tF
VDD=30V, ID=1A, RG=25Ω,
VGS=10V (Note 2,3)
30
ns
Total Gate Charge
QG
8
nC
Gate-Source Charge
QGS
2.0
nC
Gate-Drain Charge
QGD
VDS=50V, VGS=10V, ID=1.3A
RG=3.3kΩ(Note 2, 3)
1.4
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.0
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.0
A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature


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