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1N50-KW Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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1N50-KW Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 1N50-KW Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R205-053.b ■ ABSOLUTE MAXIMUM RATINGS (T C = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 1 A Avalanche Energy Single Pulsed (Note 2) EAS 50 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TA=25°С) PD 0.6 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 100mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 180 °С/W Junction to Case θJC 88 °С/W ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 10 μA Forward VGS=30V, VDS=0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ ID=250μA 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3.0 5.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A 8.6 10 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 135 pF Output Capacitance COSS 17 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 4.7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 16.5 ns Turn-On Rise Time tR 30 ns Turn-Off Delay Time tD(OFF) 23 ns Turn-Off Fall Time tF VDD=30V, ID=1A, RG=25Ω, VGS=10V (Note 2,3) 30 ns Total Gate Charge QG 8 nC Gate-Source Charge QGS 2.0 nC Gate-Drain Charge QGD VDS=50V, VGS=10V, ID=1.3A RG=3.3kΩ(Note 2, 3) 1.4 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 1.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 4.0 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature |
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