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LM2700 Scheda tecnica(PDF) 3 Page - Texas Instruments

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Il numero della parte LM2700
Spiegazioni elettronici  LM2700 600kHz/1.25MHz, 2.5A, Step-up PWM DC/DC Converter
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Produttore elettronici  TI [Texas Instruments]
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LM2700
www.ti.com
SNVS152C – MAY 2001 – REVISED MARCH 2013
Block Diagram
Detailed Description
The LM2700 utilizes a PWM control scheme to regulate the output voltage over all load conditions. The operation
can best be understood referring to the block diagram and Figure 17 of the Operation section. At the start of
each cycle, the oscillator sets the driver logic and turns on the NMOS power device conducting current through
the inductor, cycle 1 of Figure 17(a). During this cycle, the voltage at the VC pin controls the peak inductor
current. The VC voltage will increase with larger loads and decrease with smaller. This voltage is compared with
the summation of the SW voltage and the ramp compensation. The ramp compensation is used in PWM
architectures to eliminate the sub-harmonic oscillations that occur during duty cycles greater than 50%. Once the
summation of the ramp compensation and switch voltage equals the VC voltage, the PWM comparator resets the
driver logic turning off the NMOS power device. The inductor current then flows through the schottky diode to the
load and output capacitor, cycle 2 of Figure 17(b). The NMOS power device is then set by the oscillator at the
end of the period and current flows through the inductor once again.
The LM2700 has dedicated protection circuitry running during normal operation to protect the IC. The Thermal
Shutdown circuitry turns off the NMOS power device when the die temperature reaches excessive levels. The
UVP comparator protects the NMOS power device during supply power startup and shutdown to prevent
operation at voltages less than the minimum input voltage. The OVP comparator is used to prevent the output
voltage from rising at no loads allowing full PWM operation over all load conditions. The LM2700 also features a
shutdown mode decreasing the supply current to 5µA.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2001–2013, Texas Instruments Incorporated
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