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6N65-C Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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6N65-C Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N65-C Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-A51.b ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6 A Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 24 A Avalanche Energy Single Pulsed (Note 3) EAS 360 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3 ns Power Dissipation PD 40 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 20mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 3.2 °C/W |
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