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2SC4027G-X-TN3-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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2SC4027G-X-TN3-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SC4027 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R209-018.C ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Current (Pulse) ICP 2.5 A Collector Dissipation TA=25°C TO-220 PC 2 W TO-252 1 TC=25°C TO-220 65 W TO-252 15 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=10A, IE=0 180 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, RBE=∞ 160 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC =0 6 V Collector-Emitter Saturation Voltage VCE(SAT) IC =500mA, IB=50mA 0.13 0.45 V Base-Emitter Saturation Voltage VBE(SAT) IC =500mA, IB=50mA 0.85 1.2 V Collector Cutoff Current ICBO VCB=120V, IE=0 1.0 μA Emitter Cutoff Current IEBO VEB=4V, I IC =0 1.0 μA DC Current Gain hFE1 VCE=5V, IC =100mA 100 400 hFE2 VCE=5V, IC =10mA 80 Gain-Bandwidth Product fT VCE=10V, IC =50mA 120 MHz Output Capacitance COB VCB=-10V, f=1MHz 12 pF Turn-On Time TON See specified Test Circuit 60 μs Storage Time TSTG 1.2 μs Fall Time tF 80 μs CLASSIFICATION OF hFE1 RANK R S T RANGE 100~200 140~280 200~400 |
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