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2N2955L-T30-Y Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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2N2955L-T30-Y Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2N2955 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R205-004.D ABSOLUTE MAXIMUM RATINGS ( TA=25C ,unless otherwise specified ) PARAMETERS SYMBOL RATINGS UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current IC 15 A Collector Peak Current (Note) ICM 15 A Base Current IB 7 A Base Peak Current (Note) IBM 15 A Total Dissipation at TA=25C PD 115 W Max. Operating Junction Temperature TJ +200 C Storage Temperature TSTG -65 ~ 200 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VCEO(SUS) IC=200mA, IB=0V 60 V Collector-Emitter Sustaining Voltage VCER(SUS) IC=0.2 A, RBE=100Ω 70 V Collector Cut-off Current ICEO VCE=30V,IB=0 0.7 mA Collector Cut-off Current ICEX VCE=100V, VBE(OFF)=1.5V VCE=100V, VBE(OFF)=1.5V, Ta=150 C 1.0 5.0 mA Emitter Cut-off Current IEBO VBE=7V, IC=0 5.0 mA ON CHARACTERISTICS DC Current Gain (Note) hFE IC=4A,VCE=4V, IC=10A,VCE=4V 20 5 70 Collector-Emitter Saturation Voltage VCE(SAT) IC=4A, IB=400mA IC=10A, IB=3.3A 1.1 3.0 V Base-Emitter On Voltage VBE(ON) IC=4A, VCE=4V 1.5 V SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased Is/b VCE=60V, T=1.0s, Non-repetitive 2.87 A DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT IC=0.5A, VCE=10V, f=1MHz 2.5 MHz Small-Signal Current Gain hFE IC=1A, VCE=4V, f=1kHz 15 120 Small-Signal Current Gain Cut-off Frequency fhFE IC=1A, VCE=4V, f=1kHz 10 kHz Note: Pulse Test: PW≦300 s, Duty Cycle≦2% |
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