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BF1102 Scheda tecnica(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1102 Scheda tecnica(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
9 / 16 page 2000 Apr 11 9 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R handbook, halfpage 0 f (MHz) 200 1000 0 −20 −60 −80 −40 400 600 800 MCD972 crosstalk level (dB) Fig.19 Crosstalk as a function of frequency: Output level of non-active amplifier related to output level of active amplifier; typical values. Active amplifier: VDS = 5 V; VG2 = 4 V; ID =15mA. Non-active amplifier: VDS =VG1-S =0V. Source and load impedances: 50 Ω (both amplifiers). Tamb =25 °C. handbook, full pagewidth DUT C1 4.7 nF R1 10 k Ω MGS315 C4 4.7 nF L1 ≈2.2 µH C3 4.7 nF RL 50 Ω VGG VAGC VDS RGEN 50 Ω VI R2 50 Ω 4.7 nF C2 RG1 Fig.20 Cross-modulation test set-up (for one MOS-FET). |
Codice articolo simile - BF1102_15 |
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Descrizione simile - BF1102_15 |
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