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TS3A44159TD2 Scheda tecnica(PDF) 2 Page - Texas Instruments |
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TS3A44159TD2 Scheda tecnica(HTML) 2 Page - Texas Instruments |
2 / 6 page TS3A44159-DIE SCDS354 – FEBRUARY 2014 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 4 Bare Die Information BACKSIDE BOND PAD BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION THICKNESS 10.5 mils. Silicon with backgrind Floating TiN/Alcu 650 nm 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated |
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