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BF992 Scheda tecnica(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF992 Scheda tecnica(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 9 page NXP Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 THERMAL CHARACTERISTICS Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VDS =10V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air note 1 460 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-SS = ±10 mA 8 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-SS = ±10 mA 8 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; VDS = 10 V; ID =20 µA 0.2 1.3 V −V (P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 10 V; ID =20 µA 0.2 1.1 V ±I G1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S = ±7V − 25 nA ±I G2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S = ±7V − 25 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance 20 25 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 4 − pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.7 − pF Cos output capacitance f = 1 MHz − 2 − pF Crs reverse transfer capacitance f = 1 MHz − 30 40 fF F noise figure f = 200 MHz; GS =2mS − 1.2 − dB Rev. 04 - 21 November 2007 4 of 9 |
Codice articolo simile - BF992_15 |
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Descrizione simile - BF992_15 |
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