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2SC4517 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4517 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC4517 2SC4517A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 550 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=1A ; VCE=4V 10 30 COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF fT Transition frequency IE=-0.25A ; VCE=12V 6 MHz Switching times ton Turn-on time 0.7 μs ts Storage time 4.0 μs tf Fall time IC=1.0A IB1=0.15A IB2=-0.45A VCC=250V ,RL=250Ω 0.5 μs |
Codice articolo simile - 2SC4517_15 |
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Descrizione simile - 2SC4517_15 |
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