Motore di ricerca datesheet componenti elettronici |
|
CSD19537Q3 Scheda tecnica(PDF) 6 Page - Texas Instruments |
|
CSD19537Q3 Scheda tecnica(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 1000 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs 10 µs VGS - Gate-to-Source Voltage (V) 0.01 0.1 1 1 10 100 D011 TC = 125°C TC = 25°C VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25°C TC = 125°C TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 D008 VGS = 6 V VGS = 10 V CSD19537Q3 SLPS549 – AUGUST 2015 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) ID = 10 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single Pulse, Max RθJC = 1.5°C/W Figure 11. Single Pulse Unclamped Inductive Switching Figure 10. Maximum Safe Operating Area Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD19537Q3 |
Codice articolo simile - CSD19537Q3_15 |
|
Descrizione simile - CSD19537Q3_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |