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CSD17579Q5A Scheda tecnica(PDF) 5 Page - Texas Instruments

Il numero della parte CSD17579Q5A
Spiegazioni elettronici  CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
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CSD17579Q5A Scheda tecnica(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
D006
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
4
8
12
16
20
24
28
D007
TC = 25°C, I D = 8 A
TC = 125°C, I D = 8 A
Qg - Gate Charge (nC)
0
1.5
3
4.5
6
7.5
9
10.5
12
0
1
2
3
4
5
6
7
8
9
10
D004
VDS - Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
VDS - Drain-to-Source Voltage (V)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0
5
10
15
20
25
30
35
40
45
50
D002
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
VGS - Gate-to-Source Voltage (V)
1.25
1.75
2.25
2.75
3.25
3.75
0
10
20
30
40
50
D003
TC = 125°C
TC = 25°C
TC = -55°C
CSD17579Q5A
www.ti.com
SLPS524 – MARCH 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = 8 A
VDS = 15 V
Figure 5. Capacitance
Figure 4. Gate Charge
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
Copyright © 2015, Texas Instruments Incorporated
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