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2SA1293 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1293 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1293 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -0.9 -1.2 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -1 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-3A ; VCE=-1V 30 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF fT Transition frequency IC=-1A ; VCE=-4V 60 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 1.0 μs tf Fall time IB1=- IB2=-0.15A RL=10Ω;VCC≈30V 0.1 μs hFE-1 Classifications O Y 70-140 120-240 |
Codice articolo simile - 2SA1293_15 |
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Descrizione simile - 2SA1293_15 |
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