IRLF120

2

www.irf.com

ThermalResistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

6.25

RthJA

Junction-to-Ambient

—

—

175

Typical socket mount.

°C/W

Source-DrainDiodeRatingsandCharacteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

5.3

ISM

Pulse Source Current (Body Diode)

À

——

21

VSD Diode Forward Voltage

—

—

2.5

V

trr

Reverse Recovery Time

—

—

220

ns

Tj = 25°C, IF = 5.3A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

1.1

µC

VDD ≤ 50V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier website.

For footnotes, refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

—

V

VGS = 0V, ID = 250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.13

—

V/°C

Reference to 25°C, ID = 250µA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.35

VGS = 5.0V, ID = 3.4A Ã

Resistance

—

—

0.42

VGS = 4.0V, ID = 2.7A Ã

VGS(th)

Gate Threshold Voltage

1.0

—

2.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

3.1

—

—

S

VDS = 50V, IDS = 3.4A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

250

VDS= 100V, VGS= 0V

—

—

1000

µA

VDS = 80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 10V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

nA

VGS = -10V

Qg

Total Gate Charge

—

—

13

VGS = 5.0V, ID = 5.3A

Qgs

Gate-to-Source Charge

—

—

2.4

nC

VDS= 80V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

7.1

Turn-On Delay Time

—

—

13

VDD = 50V, ID = 5.3A,

tr

Rise Time

—

—

73

VGS =5.0V, RG = 18Ω

Turn-Off Delay Time

—

—

41

tf

Fall Time

—

—

27

LS + LD

Total Inductance

—

7.0

—

Ciss

Input Capacitance

—

480

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

150

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

30

—

nH

ns

Ω

Measured from drain lead (6mm/

0.25in. from package) to source lead

(6mm/0.25in. from package)