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MTBB0P10AJ3 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp.

Il numero della parte MTBB0P10AJ3
Spiegazioni elettronici  P-Channel Enhancement Mode Power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBB0P10AJ3 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C163J3
Issued Date : 2015.05.29
Revised Date :
Page No. : 5/9
MTBB0P10AJ3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
010
20
30
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-70
-20
30
80
130
180
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
-VDS, Drain-Source Voltage(V)
Ciss
C oss
f=1MHz
Crss
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
RDS(ON)
Limited
DC
10ms
100ms
1ms
100
μs
1s
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=2.5°C/W,
single pulse
Gate Charge Characteristics
0
2
4
6
8
10
04
8
Qg, Total Gate Charge(nC)
12
ID=-1.5A
VDS=-50V
VDS=-80V
Maximum Drain Current vs Case Temperature
0
2
4
6
8
10
12
25
50
75
100
125
150
175
200
TC, Case Temperature(°C)
VGS=-10V, RθJC=2.5°C/W
Typical Transfer Characteristics
0
2
4
6
8
10
12
14
16
18
20
024
68
10
-VGS, Gate-Source Voltage(V)
VDS=-10V


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