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2SA1217 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1217 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1217 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -40 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 80 240 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V;IE=0 35 pF hFE-1 Classifications O Y 80-160 120-240 |
Codice articolo simile - 2SA1217_15 |
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Descrizione simile - 2SA1217_15 |
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