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IRFB4410ZPBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRFB4410ZPBF
Spiegazioni elettronici  High Efficiency Synchronous Rectification in SMPS
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFB4410ZPBF Scheda tecnica(HTML) 2 Page - International Rectifier

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www.irf.com © 2014 International Rectifier
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April 25, 2014
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.143mH
RG = 25
Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.2
9.0
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.70
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
140
–––
–––
S
Qg
Total Gate Charge
–––
83
120
nC
Qgs
Gate-to-Source Charge
–––
19
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
27
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
56
–––
td(on)
Turn-On Delay Time
–––
16
–––
ns
tr
Rise Time
–––
52
–––
td(off)
Turn-Off Delay Time
–––
43
–––
tf
Fall Time
–––
57
–––
Ciss
Input Capacitance
–––
4820
–––
pF
Coss
Output Capacitance
–––
340
–––
Crss
Reverse Transfer Capacitance
–––
170
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) hÖ–– 420 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)g
–––
690
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
97
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
390
A
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
38
57
ns
TJ = 25°C
VR = 85V,
–––
46
69
TJ = 125°C
IF = 58A
Qrr
Reverse Recovery Charge
–––
53
80
nC TJ = 25°C
di/dt = 100A/μs
f
–––
82
120
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.5
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 58A
RG =2.7Ω
VGS = 10V f
VDD = 65V
ID = 58A, VDS =0V, VGS = 10V f
TJ = 25°C, IS = 58A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA™
VGS = 10V, ID = 58A f
VDS = VGS, ID = 150μA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 10V f
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 80V h, See Fig.11
VGS = 0V, VDS = 0V to 80V gÃ
Conditions
VDS = 10V, ID = 58A
ID = 58A
VGS = 20V
VGS = -20V


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