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IRFB4110PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFB4110PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.402 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient j ––– 62 300 Max. 180 130 670 120 190 See Fig. 14, 15, 22a, 22b 370 5.3 -55 to + 175 ± 20 2.5 10lb xin (1.1Nxm) IRFB4110PbF S D G TO-220AB D S D G Form Quantity IRFB4110PbF TO-220 Tube 50 IRFB4110PbF Base Part Number Package Type Standard Pack Orderable Part Number 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 VDSS 100V RDS(on) typ. 3.7m Ω max. 4.5m Ω ID (Silicon Limited) 180A c ID (Package Limited) 120A |
Codice articolo simile - IRFB4110PBF_15 |
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Descrizione simile - IRFB4110PBF_15 |
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