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IRFB3256PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFB3256PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page 09/22/11 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits PD - 97727 IRFB3256PbF S D G VDSS 60V RDS(on) typ. 2.7m Ω max. 3.4mΩ ID (Silicon Limited) 206A ID (Package Limited) 75A GD S Gate Drain Source TO-220AB S D G D Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ IAR Avalanche Currentà A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ij ––– 0.50 °C/W RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) -55 to + 175 ± 20 2.0 Max. 206 172 820 75 A °C 300 (1.6mm from case) 340 See Fig. 14, 15, 22a, 22b 300 3.3 10lbfxin (1.1Nxm) |
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