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IRF7NJZ44V Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF7NJZ44V
Spiegazioni elettronici  Avalanche Energy Ratings
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7NJZ44V Scheda tecnica(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
22*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
22*
IDM
Pulsed Drain Current ➀
88
PD @ TC = 25°C
Max. Power Dissipation
50
W
Linear Derating Factor
0.4
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
66
mJ
IAR
Avalanche Current ➀
22
A
EAR
Repetitive Avalanche Energy ➀
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
2.2
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
oC
A
04/24/02
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF7NJZ44V
60V
0.0165
22A*
For footnotes refer to the last page
HEXFET® POWER MOSFET
IRF7NJZ44V
SURFACE MOUNT (SMD-0.5)
60V, N-CHANNEL
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
SMD-0.5
* Current is limited by package and internal wires
PD - 94433


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