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2SA1011 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1011 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1011 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,RBE=∞ -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -180 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V VBE Base-emitter voltage IC=-10mA ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.3A ; VCE=-5V 60 200 fT Transition frequency IC=-50mA ; VCE=-10V 100 MHz Cob Output capacitance IE=0; f=1MHz ; VCB=-10V 30 pF Switching times resistive load ton Turn-on time 0.29 μs ts Storage time 0.48 μs tf Fall time IC=-0.5A ;IB1=-IB2=-50mA VCC=20V; RL=40Ω 0.19 μs hFE Classifications D E 60-120 100-200 |
Codice articolo simile - 2SA1011_15 |
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Descrizione simile - 2SA1011_15 |
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