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BYC58X-600 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BYC58X-600
Spiegazioni elettronici  8 A hyperfast rectifier diode
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BYC58X-600 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
3 of 11
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
4.
Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-600
V
VRWM
crest working reverse
voltage
-600
V
IF(AV)
average forward
current
square-wave pulse;
δ = 0.5; Th ≤ 93 °C; see Figure 1
and 2
-8
A
IFRM
repetitive peak forward
current
square-wave pulse;
δ = 0.5; tp =25 µs
-
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) =25 °C
-
110
A
tp = 8.3 ms; sine-wave pulse; Tj(init) =25 °C
-
120
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
0
4
8
12
16
20
24
28
04
8
12
IF(AV) (A)
Ptot
(W)
δ = 1
0.5
0.2
0.1
003aae164
90
102
114
126
138
150
78
66
Th(max)
(
°C)
003aae165
0
4
8
12
16
20
024
68
IF(AV) (A)
Ptot
(W)
a = 180
°
120
90
60
30


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